The central research objective of the laboratory is to establish and study novel device structures, where the characteristic size of the active region is close to atomic dimensions. This includes single-atom and single-molecule circuits formed using the mechanically controllable break junction (MCBJ) technique and which are studied by conductance histograms, superconducting subgap spectroscopy, point-contact spectroscopy and advanced statistical methods. Using heterojunction geometries we focus on the study of atomic scale resistive switching memories and the investigation of local, nanoscale spin polarization by Andreev spectroscopy. As a third platform we study nanocircuits predefined by electron beam lithography, and thinned further to atomic dimensions by electromigration or electroburning techniques.

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Contact: András Halbritter